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DOI | 10.1126/science.aal2469 |
Strong coupling of a single electron in silicon to a microwave photon | |
Mi, X.1; Cady, J. V.1,3; Zajac, D. M.1; Deelman, P. W.2; Petta, J. R.1 | |
2017-01-13 | |
发表期刊 | SCIENCE
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ISSN | 0036-8075 |
EISSN | 1095-9203 |
出版年 | 2017 |
卷号 | 355期号:6321页码:156-+ |
文章类型 | Article |
语种 | 英语 |
国家 | USA |
英文摘要 | Silicon is vital to the computing industry because of the high quality of its native oxide and well-established doping technologies. Isotopic purification has enabled quantum coherence times on the order of seconds, thereby placing silicon at the forefront of efforts to create a solid-state quantum processor. We demonstrate strong coupling of a single electron in a silicon double quantum dot to the photonic field of a microwave cavity, as shown by the observation of vacuum Rabi splitting. Strong coupling of a quantum dot electron to a cavity photon would allow for long-range qubit coupling and the long-range entanglement of electrons in semiconductor quantum dots. |
领域 | 地球科学 ; 气候变化 ; 资源环境 |
收录类别 | SCI-E |
WOS记录号 | WOS:000391743700036 |
WOS关键词 | QUANTUM STATE ; CAVITY ; CIRCUIT ; STORAGE ; SPINS ; DOTS |
WOS类目 | Multidisciplinary Sciences |
WOS研究方向 | Science & Technology - Other Topics |
URL | 查看原文 |
引用统计 | |
文献类型 | 期刊论文 |
条目标识符 | http://119.78.100.173/C666/handle/2XK7JSWQ/195207 |
专题 | 地球科学 资源环境科学 气候变化 |
作者单位 | 1.Princeton Univ, Dept Phys, Princeton, NJ 08544 USA; 2.HRL Labs LLC, 3011 Malibu Canyon Rd, Malibu, CA 90265 USA; 3.Univ Calif Santa Barbara, Dept Phys, Santa Barbara, CA 93106 USA |
推荐引用方式 GB/T 7714 | Mi, X.,Cady, J. V.,Zajac, D. M.,et al. Strong coupling of a single electron in silicon to a microwave photon[J]. SCIENCE,2017,355(6321):156-+. |
APA | Mi, X.,Cady, J. V.,Zajac, D. M.,Deelman, P. W.,&Petta, J. R..(2017).Strong coupling of a single electron in silicon to a microwave photon.SCIENCE,355(6321),156-+. |
MLA | Mi, X.,et al."Strong coupling of a single electron in silicon to a microwave photon".SCIENCE 355.6321(2017):156-+. |
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