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DOI | 10.1126/science.aai8142 |
Bismuthene on a SiC substrate: A candidate for a high-temperature quantum spin Hall material | |
Reis, F.1,2; Li, G.3,4; Dudy, L.1,2; Bauernfeind, M.1,2; Glass, S.1,2; Hanke, W.4; Thomale, R.4; Schafer, J.1,2; Claessen, R.1,2 | |
2017-07-21 | |
发表期刊 | SCIENCE
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ISSN | 0036-8075 |
EISSN | 1095-9203 |
出版年 | 2017 |
卷号 | 357期号:6348 |
文章类型 | Article |
语种 | 英语 |
国家 | Germany; Peoples R China |
英文摘要 | Quantum spin Hall materials hold the promise of revolutionary devices with dissipationless spin currents but have required cryogenic temperatures owing to small energy gaps. Here we show theoretically that a room-temperature regime with a large energy gap may be achievable within a paradigm that exploits the atomic spin-orbit coupling. The concept is based on a substrate-supported monolayer of a high-atomic number element and is experimentally realized as a bismuth honeycomb lattice on top of the insulating silicon carbide substrate SiC(0001). Using scanning tunneling spectroscopy, we detect a gap of similar to 0.8 electron volt and conductive edge states consistent with theory. Our combined theoretical and experimental results demonstrate a concept for a quantum spin Hall wide-gap scenario, where the chemical potential resides in the global system gap, ensuring robust edge conductance. |
领域 | 地球科学 ; 气候变化 ; 资源环境 |
收录类别 | SCI-E |
WOS记录号 | WOS:000405901600037 |
WOS关键词 | EPITAXIAL-GROWTH ; SURFACE |
WOS类目 | Multidisciplinary Sciences |
WOS研究方向 | Science & Technology - Other Topics |
URL | 查看原文 |
引用统计 | |
文献类型 | 期刊论文 |
条目标识符 | http://119.78.100.173/C666/handle/2XK7JSWQ/196516 |
专题 | 地球科学 资源环境科学 气候变化 |
作者单位 | 1.Univ Wurzburg, Phys Inst, D-97074 Wurzburg, Germany; 2.Univ Wurzburg, Rontgen Res Ctr Complex Mat Syst, D-97074 Wurzburg, Germany; 3.ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 201210, Peoples R China; 4.Univ Wurzburg, Inst Theoret Phys & Astrophys, D-97074 Wurzburg, Germany |
推荐引用方式 GB/T 7714 | Reis, F.,Li, G.,Dudy, L.,et al. Bismuthene on a SiC substrate: A candidate for a high-temperature quantum spin Hall material[J]. SCIENCE,2017,357(6348). |
APA | Reis, F..,Li, G..,Dudy, L..,Bauernfeind, M..,Glass, S..,...&Claessen, R..(2017).Bismuthene on a SiC substrate: A candidate for a high-temperature quantum spin Hall material.SCIENCE,357(6348). |
MLA | Reis, F.,et al."Bismuthene on a SiC substrate: A candidate for a high-temperature quantum spin Hall material".SCIENCE 357.6348(2017). |
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