GSTDTAP  > 地球科学
DOI10.1126/science.aaq1479
3D charge and 2D phonon transports leading to high out-of-plane ZT in n-type SnSe crystals
Chang, Cheng1; Wu, Minghui2; He, Dongsheng2; Pei, Yanling1; Wu, Chao-Feng3; Wu, Xuefeng2; Yu, Hulei4; Zhu, Fangyuan5; Wang, Kedong2; Chen, Yue4; Huang, Li2; Li, Jing-Feng3; He, Jiaqing2; Zhao, Li-Dong1
2018-05-18
发表期刊SCIENCE
ISSN0036-8075
EISSN1095-9203
出版年2018
卷号360期号:6390页码:778-782
文章类型Article
语种英语
国家Peoples R China
英文摘要

Thermoelectric technology enables the harvest of waste heat and its direct conversion into electricity. The conversion efficiency is determined by the materials figure of merit ZT. Here we show a maximum ZT of similar to 2.8 +/- 0.5 at 773 kelvin in n-type tin selenide (SnSe) crystals out of plane. The thermal conductivity in layered SnSe crystals is the lowest in the out-of-plane direction [two-dimensional (2D) phonon transport]. We doped SnSe with bromine to make n-type SnSe crystals with the overlapping interlayer charge density (3D charge transport). A continuous phase transition increases the symmetry and diverges two converged conduction bands. These two factors improve carrier mobility, while preserving a large Seebeck coefficient. Our findings can be applied in 2D layered materials and provide a new strategy to enhance out-of-plane electrical transport properties without degrading thermal properties.


领域地球科学 ; 气候变化 ; 资源环境
收录类别SCI-E
WOS记录号WOS:000432473500046
WOS关键词HIGH-THERMOELECTRIC PERFORMANCE ; THERMAL-CONDUCTIVITY ; SINGLE-CRYSTALS ; BULK THERMOELECTRICS ; EFFICIENCY ; ENHANCEMENT ; TEMPERATURE ; SCATTERING ; DISTORTION ; MECHANISM
WOS类目Multidisciplinary Sciences
WOS研究方向Science & Technology - Other Topics
引用统计
文献类型期刊论文
条目标识符http://119.78.100.173/C666/handle/2XK7JSWQ/198698
专题地球科学
资源环境科学
气候变化
作者单位1.Beihang Univ, Sch Mat Sci & Engn, Beijing 100191, Peoples R China;
2.Southern Univ Sci & Technol, Dept Phys, Shenzhen 518055, Peoples R China;
3.Tsinghua Univ, Sch Mat Sci & Engn, Key Lab New Ceram & Fine Proc, Beijing 100084, Peoples R China;
4.Univ Hong Kong, Dept Mech Engn, Hong Kong, Hong Kong, Peoples R China;
5.Chinese Acad Sci, Shanghai Inst Appl Phys, Shanghai 201204, Peoples R China
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GB/T 7714
Chang, Cheng,Wu, Minghui,He, Dongsheng,et al. 3D charge and 2D phonon transports leading to high out-of-plane ZT in n-type SnSe crystals[J]. SCIENCE,2018,360(6390):778-782.
APA Chang, Cheng.,Wu, Minghui.,He, Dongsheng.,Pei, Yanling.,Wu, Chao-Feng.,...&Zhao, Li-Dong.(2018).3D charge and 2D phonon transports leading to high out-of-plane ZT in n-type SnSe crystals.SCIENCE,360(6390),778-782.
MLA Chang, Cheng,et al."3D charge and 2D phonon transports leading to high out-of-plane ZT in n-type SnSe crystals".SCIENCE 360.6390(2018):778-782.
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