GSTDTAP  > 地球科学
DOI10.1126/science.aat8126
Controlled crack propagation for atomic precision handling of wafer-scale two-dimensional materials
Shim, Jaewoo1,2; Bae, Sang-Hoon1,2; Kong, Wei1,2; Lee, Doyoon1,2; Qiao, Kuan1,2; Nezich, Daniel3; Park, Yong Ju4; Zhao, Ruike1,5; Sundaram, Suresh6; Li, Xin6; Yeon, Hanwool1,2; Choi, Chanyeol1,2; Kum, Hyun1,2; Yue, Ruoyu7; Zhou, Guanyu7; Ou, Yunbo8,9; Lee, Kyusang1,2,10,11; Moodera, Jagadeesh8,9; Zhao, Xuanhe1; Ahn, Jong-Hyun4; Hinkle, Christopher7,12; Ougazzaden, Abdallah6; Kim, Jeehwan1,2,13,14
2018-11-09
发表期刊SCIENCE
ISSN0036-8075
EISSN1095-9203
出版年2018
卷号362期号:6415页码:665-+
文章类型Article
语种英语
国家USA; South Korea; France
英文摘要

Although flakes of two-dimensional (2D) heterostructures at the micrometer scale can be formed with adhesive-tape exfoliation methods, isolation of 2D flakes into monolayers is extremely time consuming because it is a trial-and-error process. Controlling the number of 2D layers through direct growth also presents difficulty because of the high nucleation barrier on 2D materials. We demonstrate a layer-resolved 2D material splitting technique that permits high-throughput production of multiple monolayers of wafer-scale (5-centimeter diameter) 2D materials by splitting single stacks of thick 2D materials grown on a single wafer. Wafer-scale uniformity of hexagonal boron nitride, tungsten disulfide, tungsten diselenide, molybdenum disulfide, and molybdenum diselenide monolayers was verified by photoluminescence response and by substantial retention of electronic conductivity. We fabricated wafer-scale van der Waals heterostructures, including field-effect transistors, with single-atom thickness resolution.


领域地球科学 ; 气候变化 ; 资源环境
收录类别SCI-E
WOS记录号WOS:000450474500036
WOS关键词HEXAGONAL BORON-NITRIDE ; CARRIER TRANSPORT ; LAYER ; HETEROSTRUCTURES ; GRAPHENE ; WS2 ; PHOTOLUMINESCENCE ; RESISTANCE ; MOS2
WOS类目Multidisciplinary Sciences
WOS研究方向Science & Technology - Other Topics
引用统计
文献类型期刊论文
条目标识符http://119.78.100.173/C666/handle/2XK7JSWQ/200031
专题地球科学
资源环境科学
气候变化
作者单位1.MIT, Dept Mech Engn, Cambridge, MA 02139 USA;
2.MIT, Elect Res Lab, Cambridge, MA 02139 USA;
3.MIT, Lincoln Lab, 244 Wood St, Lexington, MA 02173 USA;
4.Yonsei Univ, Sch Elect & Elect Engn, Seoul 03722, South Korea;
5.Ohio State Univ, Dept Mech & Aerosp Engn, Columbus, OH 43210 USA;
6.Georgia Inst Technol, Sch Elect & Comp Engn, UMI GT CNRS 2958, GT Lorraine, Metz, France;
7.Univ Texas Dallas, Dept Mat Sci & Engn, Richardson, TX 75083 USA;
8.MIT, Dept Phys, Cambridge, MA 02139 USA;
9.MIT, Plasma Sci & Fus Ctr, 77 Massachusetts Ave, Cambridge, MA 02139 USA;
10.Univ Virginia, Dept Elect & Comp Engn, Charlottesville, VA USA;
11.Univ Virginia, Dept Mat Sci Engn, Charlottesville, VA USA;
12.Univ Notre Dame, Dept Elect Engn, Notre Dame, IN 46556 USA;
13.MIT, Dept Mat Sci & Engn, Cambridge, MA 02139 USA;
14.MIT, Microsyst Technol Lab, 77 Massachusetts Ave, Cambridge, MA 02139 USA
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GB/T 7714
Shim, Jaewoo,Bae, Sang-Hoon,Kong, Wei,et al. Controlled crack propagation for atomic precision handling of wafer-scale two-dimensional materials[J]. SCIENCE,2018,362(6415):665-+.
APA Shim, Jaewoo.,Bae, Sang-Hoon.,Kong, Wei.,Lee, Doyoon.,Qiao, Kuan.,...&Kim, Jeehwan.(2018).Controlled crack propagation for atomic precision handling of wafer-scale two-dimensional materials.SCIENCE,362(6415),665-+.
MLA Shim, Jaewoo,et al."Controlled crack propagation for atomic precision handling of wafer-scale two-dimensional materials".SCIENCE 362.6415(2018):665-+.
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