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DOI | 10.1126/science.aav7057 |
Printed subthreshold organic transistors operating at high gain and ultralow power | |
Jiang, Chen1,2; Choi, Hyung Woo1; Cheng, Xiang1,3; Ma, Hanbin1,4,5; Hasko, David1; Nathan, Arokia1,3,5 | |
2019-02-15 | |
发表期刊 | SCIENCE |
ISSN | 0036-8075 |
EISSN | 1095-9203 |
出版年 | 2019 |
卷号 | 363期号:6428页码:719-+ |
文章类型 | Article |
语种 | 英语 |
国家 | England; Peoples R China |
英文摘要 | Overcoming the trade-offs among power consumption, fabrication cost, and signal amplification has been a long-standing issue for wearable electronics. We report a high-gain, fully inkjet-printed Schottky barrier organic thin-film transistor amplifier circuit. The transistor signal amplification efficiency is 38.2 siemens per ampere, which is near the theoretical thermionic limit, with an ultralow power consumption of <1 nanowatt. The use of a Schottky barrier for the source gave the transistor geometry-independent electrical characteristics and accommodated the large dimensional variation in inkjet-printed features. These transistors exhibited good reliability with negligible threshold-voltage shift. We demonstrated this capability with an ultralow-power high-gain amplifier for the detection of electrophysiological signals and showed a signal-to-noise ratio of >60 decibels and noise voltage of <0.3 microvolt per hertz(1/2) at 100 hertz. |
领域 | 地球科学 ; 气候变化 ; 资源环境 |
收录类别 | SCI-E |
WOS记录号 | WOS:000458874100028 |
WOS关键词 | THIN-FILM TRANSISTORS ; SCHOTTKY-BARRIER ; FIELD ; POLYMER ; TECHNOLOGY ; CIRCUITS ; UNIFORM ; PHYSICS ; ENERGY |
WOS类目 | Multidisciplinary Sciences |
WOS研究方向 | Science & Technology - Other Topics |
引用统计 | |
文献类型 | 期刊论文 |
条目标识符 | http://119.78.100.173/C666/handle/2XK7JSWQ/200763 |
专题 | 地球科学 资源环境科学 气候变化 |
作者单位 | 1.Univ Cambridge, Dept Elect Engn, Dept Engn, 9 JJ Thomson Ave, Cambridge CB3 0FA, England; 2.Univ Cambridge, Dept Clin Neurosci, Cambridge Biomed Campus, Cambridge CB2 0QQ, England; 3.Cambridge Touch Technol, 154 Cambridge Sci Pk, Cambridge CB4 0GN, England; 4.Chinese Acad Sci, Suzhou Inst Biomed Engn & Technol, Suzhou 215163, Peoples R China; 5.Acxel Tech, 184 Cambridge Sci Pk, Cambridge CB4 0GA, England |
推荐引用方式 GB/T 7714 | Jiang, Chen,Choi, Hyung Woo,Cheng, Xiang,et al. Printed subthreshold organic transistors operating at high gain and ultralow power[J]. SCIENCE,2019,363(6428):719-+. |
APA | Jiang, Chen,Choi, Hyung Woo,Cheng, Xiang,Ma, Hanbin,Hasko, David,&Nathan, Arokia.(2019).Printed subthreshold organic transistors operating at high gain and ultralow power.SCIENCE,363(6428),719-+. |
MLA | Jiang, Chen,et al."Printed subthreshold organic transistors operating at high gain and ultralow power".SCIENCE 363.6428(2019):719-+. |
条目包含的文件 | 条目无相关文件。 |
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