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DOI | 10.1038/ncomms15465 |
Fundamental aspects to localize self-catalyzed III-V nanowires on silicon | |
Vukajlovic-Plestina, J.1; Kim, W.1; Ghisalberti, L.1,2,3; Varnavides, G.2,3; Tuetuencuoglu, G.1; Potts, H.1; Friedl, M.1; Gueniat, L.1; Carter, W. C.1,2,3; Dubrovskii, V. G.4; Fontcuberta i Morral, A.1,5 | |
2019-02-20 | |
发表期刊 | NATURE COMMUNICATIONS
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ISSN | 2041-1723 |
出版年 | 2019 |
卷号 | 10 |
文章类型 | Article |
语种 | 英语 |
国家 | Switzerland; USA; Russia |
英文摘要 | III-V semiconductor nanowires deterministically placed on top of silicon electronic platform would open many avenues in silicon-based photonics, quantum technologies and energy harvesting. For this to become a reality, gold-free site-selected growth is necessary. Here, we propose a mechanism which gives a clear route for maximizing the nanowire yield in the self-catalyzed growth fashion. It is widely accepted that growth of nanowires occurs on a layerby-layer basis, starting at the triple-phase line. Contrary to common understanding, we find that vertical growth of nanowires starts at the oxide-substrate line interface, forming a ring-like structure several layers thick. This is granted by optimizing the diameter/height aspect ratio and cylindrical symmetry of holes, which impacts the diffusion flux of the group V element through the well-positioned group III droplet. This work provides clear grounds for realistic integration of III-Vs on silicon and for the organized growth of nanowires in other material systems. |
领域 | 资源环境 |
收录类别 | SCI-E |
WOS记录号 | WOS:000459097100004 |
WOS关键词 | INDIUM-PHOSPHIDE NANOWIRES ; GAAS NANOWIRES ; CRYSTAL PHASE ; GROWTH ; NUCLEATION ; GOLD |
WOS类目 | Multidisciplinary Sciences |
WOS研究方向 | Science & Technology - Other Topics |
URL | 查看原文 |
引用统计 | |
文献类型 | 期刊论文 |
条目标识符 | http://119.78.100.173/C666/handle/2XK7JSWQ/203304 |
专题 | 资源环境科学 |
作者单位 | 1.Ecole Polytech Fed Lausanne, Inst Mat, Lab Semicond Mat, CH-1015 Lausanne, Switzerland; 2.MIT, Dept Mat Sci, Cambridge, MA 02139 USA; 3.MIT, Dept Engn, Cambridge, MA 02139 USA; 4.ITMO Univ, Kronverkskiy Prospekt 49, St Petersburg 197101, Russia; 5.Ecole Polytech Fed Lausanne, Inst Phys, CH-1015 Lausanne, Switzerland |
推荐引用方式 GB/T 7714 | Vukajlovic-Plestina, J.,Kim, W.,Ghisalberti, L.,et al. Fundamental aspects to localize self-catalyzed III-V nanowires on silicon[J]. NATURE COMMUNICATIONS,2019,10. |
APA | Vukajlovic-Plestina, J..,Kim, W..,Ghisalberti, L..,Varnavides, G..,Tuetuencuoglu, G..,...&Fontcuberta i Morral, A..(2019).Fundamental aspects to localize self-catalyzed III-V nanowires on silicon.NATURE COMMUNICATIONS,10. |
MLA | Vukajlovic-Plestina, J.,et al."Fundamental aspects to localize self-catalyzed III-V nanowires on silicon".NATURE COMMUNICATIONS 10(2019). |
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