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DOI | 10.1038/s41467-017-01346-1 |
Ultrasensitive MoS2 photodetector by serial nano-bridge multi-heterojunction | |
Kim, Ki Seok1; Ji, You Jin1; Kim, Ki Hyun1; Choi, Seunghyuk2; Kang, Dong-Ho3,4; Heo, Keun4; Cho, Seongjae5; Yim, Soonmin6,7; Lee, Sungjoo2; Park, Jin-Hong4; Jung, Yeon Sik7; Yeom, Geun Young1,2 | |
2019-10-16 | |
发表期刊 | NATURE COMMUNICATIONS
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ISSN | 2041-1723 |
出版年 | 2019 |
卷号 | 10 |
文章类型 | Article |
语种 | 英语 |
国家 | South Korea; Singapore; USA |
英文摘要 | The recent reports of various photodetectors based on molybdenum disulfide (MoS2) field effect transistors showed that it was difficult to obtain optoelectronic performances in the broad detection range [visible-infrared (IR)] applicable to various fields. Here, by forming a mono-/multi-layer nano-bridge multi-heterojunction structure (more than > 300 junctions with 25 nm intervals) through the selective layer control of multi-layer MoS2, a photodetector with ultrasensitive optoelectronic performances in a broad spectral range (photoresponsivity of 2.67 x 10(6) A/W at lambda = 520 nm and 1.65 x 10(4) A/W at lambda = 1064 nm) superior to the previously reported MoS2 -based photodetectors could be successfully fabricated. The nanobridge multi-heterojunction is believed to be an important device technology that can be applied to broadband light sensing, highly sensitive fluorescence imaging, ultrasensitive biomedical diagnostics, and ultrafast optoelectronic integrated circuits through the formation of a nanoscale serial multi-heterojunction, just by adding a selective layer control process. |
领域 | 资源环境 |
收录类别 | SCI-E |
WOS记录号 | WOS:000490417700013 |
WOS关键词 | PHOTOTRANSISTORS ; PERFORMANCE ; PHOTOCONDUCTIVITY ; TRANSISTORS ; GENERATION ; DRIVEN |
WOS类目 | Multidisciplinary Sciences |
WOS研究方向 | Science & Technology - Other Topics |
URL | 查看原文 |
引用统计 | |
文献类型 | 期刊论文 |
条目标识符 | http://119.78.100.173/C666/handle/2XK7JSWQ/203472 |
专题 | 资源环境科学 |
作者单位 | 1.Sungkyunkwan Univ, Sch Adv Mat Sci & Engn, 2066 Seobu Ro, Suwon 16419, Gyeonggi Do, South Korea; 2.Sungkyunkwan Univ, SKKU Adv Inst Nano Technol SAINT, 2066 Seobu Ro, Suwon 16419, Gyeonggi Do, South Korea; 3.Nanyang Technol Univ, Sch Elect & Elect Engn, 50 Nanyang Ave, Singapore 639798, Singapore; 4.Sungkyunkwan Univ, Sch Elect & Elect Engn, 2066 Seobu Ro, Suwon 16419, Gyeonggi Do, South Korea; 5.Gachon Univ, Dept Elect Engn, Gyeonggi Do 13120, South Korea; 6.Univ Chicago, Pritzker Sch Mol Engn, 5640 South Ellis Ave, Chicago, IL 60637 USA; 7.Korea Adv Inst Sci & Technol, Sch Mat Sci & Engn, 291 Daehak Ro, Daejeon 305701, South Korea |
推荐引用方式 GB/T 7714 | Kim, Ki Seok,Ji, You Jin,Kim, Ki Hyun,et al. Ultrasensitive MoS2 photodetector by serial nano-bridge multi-heterojunction[J]. NATURE COMMUNICATIONS,2019,10. |
APA | Kim, Ki Seok.,Ji, You Jin.,Kim, Ki Hyun.,Choi, Seunghyuk.,Kang, Dong-Ho.,...&Yeom, Geun Young.(2019).Ultrasensitive MoS2 photodetector by serial nano-bridge multi-heterojunction.NATURE COMMUNICATIONS,10. |
MLA | Kim, Ki Seok,et al."Ultrasensitive MoS2 photodetector by serial nano-bridge multi-heterojunction".NATURE COMMUNICATIONS 10(2019). |
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