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DOI | 10.1038/s41467-018-04860-y |
Purely antiferromagnetic magnetoelectric random access memory | |
Kosub, Tobias1,2; Kopte, Martin1,2; Huehne, Ruben3; Appel, Patrick4; Shields, Brendan4; Maletinsky, Patrick4; Huebner, Rene2; Liedke, Maciej Oskar5; Fassbender, Juergen2; Schmidt, Oliver G.1; Makarov, Denys1,2 | |
2017-01-03 | |
发表期刊 | NATURE COMMUNICATIONS |
ISSN | 2041-1723 |
出版年 | 2017 |
卷号 | 8 |
文章类型 | Article |
语种 | 英语 |
国家 | Germany; Switzerland |
英文摘要 | Magnetic random access memory schemes employing magnetoelectric coupling to write binary information promise outstanding energy efficiency. We propose and demonstrate a purely antiferromagnetic magnetoelectric random access memory (AF-MERAM) that offers a remarkable 50-fold reduction of the writing threshold compared with ferromagnet-based counterparts, is robust against magnetic disturbances and exhibits no ferromagnetic hysteresis losses. Using the magnetoelectric antiferromagnet Cr2O3, we demonstrate reliable isothermal switching via gate voltage pulses and all-electric readout at room temperature. As no ferromagnetic component is present in the system, the writing magnetic field does not need to be pulsed for readout, allowing permanent magnets to be used. Based on our prototypes, we construct a comprehensive model of the magnetoelectric selection mechanisms in thin films of magnetoelectric antiferromagnets, revealing misfit induced ferrimagnetism as an important factor. Beyond memory applications, the AF-MERAM concept introduces a general all-electric interface for antiferromagnets and should find wide applicability in antiferromagnetic spintronics. |
领域 | 资源环境 |
收录类别 | SCI-E |
WOS记录号 | WOS:000391062200001 |
WOS关键词 | ROOM-TEMPERATURE ; ELECTRIC-FIELD ; CR2O3 |
WOS类目 | Multidisciplinary Sciences |
WOS研究方向 | Science & Technology - Other Topics |
URL | 查看原文 |
引用统计 | |
文献类型 | 期刊论文 |
条目标识符 | http://119.78.100.173/C666/handle/2XK7JSWQ/203863 |
专题 | 资源环境科学 |
作者单位 | 1.Inst Solid State & Mat Res IFW Dresden eV, Inst Integrat Nanosci, D-01069 Dresden, Germany; 2.Helmholtz Zentrum Dresden Rossendorf eV, Inst Ion Beam Phys & Mat Res, D-01328 Dresden, Germany; 3.Inst Solid State & Mat Res IFW Dresden eV, Inst Metall Mat, D-01069 Dresden, Germany; 4.Univ Basel, Dept Phys, CH-4056 Basel, Switzerland; 5.Helmholtz Zentrum Dresden Rossendorf eV, Inst Radiat Phys, D-01328 Dresden, Germany |
推荐引用方式 GB/T 7714 | Kosub, Tobias,Kopte, Martin,Huehne, Ruben,et al. Purely antiferromagnetic magnetoelectric random access memory[J]. NATURE COMMUNICATIONS,2017,8. |
APA | Kosub, Tobias.,Kopte, Martin.,Huehne, Ruben.,Appel, Patrick.,Shields, Brendan.,...&Makarov, Denys.(2017).Purely antiferromagnetic magnetoelectric random access memory.NATURE COMMUNICATIONS,8. |
MLA | Kosub, Tobias,et al."Purely antiferromagnetic magnetoelectric random access memory".NATURE COMMUNICATIONS 8(2017). |
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