Wafer-scale single-crystal hexagonal boron nitride monolayers on Cu (111)

doi:10.1038/s41586-020-2009-2

GSTDTAP > 地球科学

DOI	10.1038/s41586-020-2009-2
	Wafer-scale single-crystal hexagonal boron nitride monolayers on Cu (111)
	Luong, Duy X.1,2; Bets, Ksenia V.3; Algozeeb, Wala Ali 2; Stanford, Michael G.2; Kittrell, Carter 2; Chen, Weiyin 2; Salvatierra, Rodrigo V.2; Ren, Muqing 2; McHugh, Emily A.2; Advincula, Paul A.2; Wang, Zhe 2; Bhatt, Mahesh 4; Guo, Hua 3; Mancevski, Vladimir 2; Shahsavari, Rouzbeh 4,5
	2020-01-15
发表期刊	NATURE
ISSN	0028-0836
EISSN	1476-4687
出版年	2020
卷号	579 期号:7798 页码:219-+
文章类型	Article
语种	英语
国家	Taiwan; Peoples R China; USA
英文关键词	Ultrathin two-dimensional (2D) semiconducting layered materials offer great potential for extending Moore' s law of the number of transistors in an integrated circuit(1). One key challenge with 2D semiconductors is to avoid the formation of charge scattering and trap sites from adjacent dielectrics. An insulating van der Waals layer of hexagonal boron nitride (hBN) provides an excellent interface dielectric, efficiently reducing charge scattering(2,3). Recent studies have shown the growth of single-crystal hBN films on molten gold surfaces(4) or bulk copper foils(5). However, the use of molten gold is not favoured by industry, owing to its high cost, cross-contamination and potential issues of process control and scalability. Copper foils might be suitable for roll-to-roll processes, but are unlikely to be compatible with advanced microelectronic fabrication on wafers. Thus, a reliable way of growing single-crystal hBN films directly on wafers would contribute to the broad adoption of 2D layered materials in industry. Previous attempts to grow hBN monolayers on Cu (111) metals have failed to achieve mono-orientation, resulting in unwanted grain boundaries when the layers merge into films(6,7). Growing single-crystal hBN on such high-symmetry surface planes as Cu (111)(5,8) is widely believed to be impossible, even in theory. Nonetheless, here we report the successful epitaxial growth of single-crystal hBN monolayers on a Cu (111) thin film across a two-inch c-plane sapphire wafer. This surprising result is corroborated by our first-principles calculations, suggesting that the epitaxial growth is enhanced by lateral docking of hBN to Cu (111) steps, ensuring the mono-orientation of hBN monolayers. The obtained single-crystal hBN, incorporated as an interface layer between molybdenum disulfide and hafnium dioxide in a bottom-gate configuration, enhanced the electrical performance of transistors. This reliable approach to producing wafer-scale single-crystal hBN paves the way to future 2D electronics.
领域	地球科学 ; 气候变化 ; 资源环境
收录类别	SCI-E
WOS记录号	WOS:000518098200001
WOS关键词	GRAPHENE ; GROWTH ; METALS ; BN
WOS类目	Multidisciplinary Sciences
WOS研究方向	Science & Technology - Other Topics
引用统计
文献类型	期刊论文
条目标识符	http://119.78.100.173/C666/handle/2XK7JSWQ/281243
专题	地球科学资源环境科学气候变化
作者单位	1.Rice Univ, Appl Phys Program, Houston, TX USA; 2.Rice Univ, Dept Chem, Houston, TX 77005 USA; 3.Rice Univ, Dept Mat Sci & NanoEngn, Houston, TX 77005 USA; 4.C Crete Technol, Stafford, TX 77477 USA; 5.Rice Univ, Dept Civil & Environm Engn, Houston, TX 77005 USA; 6.Rice Univ, Smalley Curl Inst, Houston, TX 77005 USA; 7.Rice Univ, NanoCarbon Ctr, Houston, TX 77005 USA
推荐引用方式 GB/T 7714	Luong, Duy X.,Bets, Ksenia V.,Algozeeb, Wala Ali,et al. Wafer-scale single-crystal hexagonal boron nitride monolayers on Cu (111)[J]. NATURE,2020,579(7798):219-+.
APA	Luong, Duy X..,Bets, Ksenia V..,Algozeeb, Wala Ali.,Stanford, Michael G..,Kittrell, Carter.,...&Shahsavari, Rouzbeh.(2020).Wafer-scale single-crystal hexagonal boron nitride monolayers on Cu (111).NATURE,579(7798),219-+.
MLA	Luong, Duy X.,et al."Wafer-scale single-crystal hexagonal boron nitride monolayers on Cu (111)".NATURE 579.7798(2020):219-+.