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DOI | 10.1038/s41467-019-09935-y |
Enhanced electron dephasing in three-dimensional topological insulators | |
Liao, Jian1; Ou, Yunbo2; Liu, Haiwen3; He, Ke2; Ma, Xucun2; Xue, Qi-Kun2; Li, Yongqing1,4,5 | |
2019-05-02 | |
发表期刊 | NATURE COMMUNICATIONS
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ISSN | 2041-1723 |
出版年 | 2017 |
卷号 | 8 |
文章类型 | Article |
语种 | 英语 |
国家 | Peoples R China |
英文摘要 | Study of the dephasing in electronic systems is not only important for probing the nature of their ground states, but also crucial to harnessing the quantum coherence for information processing. In contrast to well-studied conventional metals and semiconductors, it remains unclear which mechanism is mainly responsible for electron dephasing in three-dimensional topological insulators (TIs). Here, we report on using weak antilocalization effect to measure the dephasing rates in highly tunable (Bi,Sb)(2)Te-3 thin films. As the transport is varied from a bulk-conducting regime to surface-dominant transport, the dephasing rate is observed to evolve from a linear temperature dependence to a sublinear power-law dependence. Although the former is consistent with the Nyquist electron-electron interactions commonly seen in ordinary 2D systems, the latter leads to enhanced electron dephasing at low temperatures and is attributed to the coupling between the surface states and the localized charge puddles in the bulk of 3D TIs. |
领域 | 资源环境 |
收录类别 | SCI-E |
WOS记录号 | WOS:000405176300001 |
WOS关键词 | SURFACE-STATES ; NANORIBBONS ; SUPERCONDUCTORS ; FERMIONS ; FILMS |
WOS类目 | Multidisciplinary Sciences |
WOS研究方向 | Science & Technology - Other Topics |
URL | 查看原文 |
引用统计 | |
文献类型 | 期刊论文 |
条目标识符 | http://119.78.100.173/C666/handle/2XK7JSWQ/204352 |
专题 | 资源环境科学 |
作者单位 | 1.Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Inst Phys, Beijing 100190, Peoples R China; 2.Tsinghua Univ, Dept Phys, State Key Lab Low Dimens Quantum Phys, Beijing 100084, Peoples R China; 3.Beijing Normal Univ, Dept Phys, Ctr Adv Quantum Studies, Beijing 100875, Peoples R China; 4.Univ Chinese Acad Sci, Sch Phys Sci, Beijing 100190, Peoples R China; 5.Beijing Key Lab Nanomat & Nanodevices, Beijing 100190, Peoples R China |
推荐引用方式 GB/T 7714 | Liao, Jian,Ou, Yunbo,Liu, Haiwen,et al. Enhanced electron dephasing in three-dimensional topological insulators[J]. NATURE COMMUNICATIONS,2019,8. |
APA | Liao, Jian.,Ou, Yunbo.,Liu, Haiwen.,He, Ke.,Ma, Xucun.,...&Li, Yongqing.(2019).Enhanced electron dephasing in three-dimensional topological insulators.NATURE COMMUNICATIONS,8. |
MLA | Liao, Jian,et al."Enhanced electron dephasing in three-dimensional topological insulators".NATURE COMMUNICATIONS 8(2019). |
条目包含的文件 | 条目无相关文件。 |
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