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Order in the disorder: density fluctuations in amorphous silicon discovered | |
admin | |
2020-10-29 | |
发布年 | 2020 |
语种 | 英语 |
国家 | 德国 |
领域 | 资源环境 |
正文(英文) | For the first time, a team at HZB has identified the atomic substructure of amorphous silicon with a resolution of 0.8 nanometres using X-ray and neutron scattering at BESSY II and BER II. Such a-Si:H thin films have been used for decades in solar cells, TFT displays, and detectors. The results show that three different phases form within the amorphous matrix, which dramatically influences the quality and lifetime of the semiconductor layer. The study was selected for the cover of the actual issue of Physical Review Letters. |
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来源平台 | Helmholtz Association |
文献类型 | 新闻 |
条目标识符 | http://119.78.100.173/C666/handle/2XK7JSWQ/301307 |
专题 | 资源环境科学 |
推荐引用方式 GB/T 7714 | admin. Order in the disorder: density fluctuations in amorphous silicon discovered. 2020. |
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