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Wafer-scale single-crystal hexagonal boron nitride monolayers on Cu (111) 期刊论文
NATURE, 2020, 579 (7798) : 219-+
作者:  Luong, Duy X.;  Bets, Ksenia V.;  Algozeeb, Wala Ali;  Stanford, Michael G.;  Kittrell, Carter;  Chen, Weiyin;  Salvatierra, Rodrigo V.;  Ren, Muqing;  McHugh, Emily A.;  Advincula, Paul A.;  Wang, Zhe;  Bhatt, Mahesh;  Guo, Hua;  Mancevski, Vladimir;  Shahsavari, Rouzbeh
收藏  |  浏览/下载:108/0  |  提交时间:2020/07/03

Ultrathin two-dimensional (2D) semiconducting layered materials offer great potential for extending Moore'  s law of the number of transistors in an integrated circuit(1). One key challenge with 2D semiconductors is to avoid the formation of charge scattering and trap sites from adjacent dielectrics. An insulating van der Waals layer of hexagonal boron nitride (hBN) provides an excellent interface dielectric, efficiently reducing charge scattering(2,3). Recent studies have shown the growth of single-crystal hBN films on molten gold surfaces(4) or bulk copper foils(5). However, the use of molten gold is not favoured by industry, owing to its high cost, cross-contamination and potential issues of process control and scalability. Copper foils might be suitable for roll-to-roll processes, but are unlikely to be compatible with advanced microelectronic fabrication on wafers. Thus, a reliable way of growing single-crystal hBN films directly on wafers would contribute to the broad adoption of 2D layered materials in industry. Previous attempts to grow hBN monolayers on Cu (111) metals have failed to achieve mono-orientation, resulting in unwanted grain boundaries when the layers merge into films(6,7). Growing single-crystal hBN on such high-symmetry surface planes as Cu (111)(5,8) is widely believed to be impossible, even in theory. Nonetheless, here we report the successful epitaxial growth of single-crystal hBN monolayers on a Cu (111) thin film across a two-inch c-plane sapphire wafer. This surprising result is corroborated by our first-principles calculations, suggesting that the epitaxial growth is enhanced by lateral docking of hBN to Cu (111) steps, ensuring the mono-orientation of hBN monolayers. The obtained single-crystal hBN, incorporated as an interface layer between molybdenum disulfide and hafnium dioxide in a bottom-gate configuration, enhanced the electrical performance of transistors. This reliable approach to producing wafer-scale single-crystal hBN paves the way to future 2D electronics.


  
Design and synthesis of multigrain nanocrystals via geometric misfit strain 期刊论文
NATURE, 2020, 577 (7790) : 359-+
作者:  Oh, Myoung Hwan;  Cho, Min Gee;  Chung, Dong Young;  Park, Inchul;  Kwon, Youngwook Paul;  Ophus, Colin;  Kim, Dokyoon;  Kim, Min Gyu;  Jeong, Beomgyun;  Gu, X. Wendy;  Jo, Jinwoung;  Yoo, Ji Mun;  Hong, Jaeyoung;  McMains, Sara;  Kang, Kisuk;  Sung, Yung-Eun;  Alivisatos, A. Paul;  Hyeon, Taeghwan
收藏  |  浏览/下载:32/0  |  提交时间:2020/07/03

The impact of topological defects associated with grain boundaries (GB defects) on the electrical, optical, magnetic, mechanical and chemical properties of nanocrystalline materials(1,2) is well known. However, elucidating this influence experimentally is difficult because grains typically exhibit a large range of sizes, shapes and random relative orientations(3-5). Here we demonstrate that precise control of the heteroepitaxy of colloidal polyhedral nanocrystals enables ordered grain growth and can thereby produce material samples with uniform GB defects. We illustrate our approach with a multigrain nanocrystal comprising a Co3O4 nanocube core that carries a Mn3O4 shell on each facet. The individual shells are symmetry-related interconnected grains(6), and the large geometric misfit between adjacent tetragonal Mn3O4 grains results in tilt boundaries at the sharp edges of the Co3O4 nanocube core that join via disclinations. We identify four design principles that govern the production of these highly ordered multigrain nanostructures. First, the shape of the substrate nanocrystal must guide the crystallographic orientation of the overgrowth phase(7). Second, the size of the substrate must be smaller than the characteristic distance between the dislocations. Third, the incompatible symmetry between the overgrowth phase and the substrate increases the geometric misfit strain between the grains. Fourth, for GB formation under near-equilibrium conditions, the surface energy of the shell needs to be balanced by the increasing elastic energy through ligand passivation(8-10). With these principles, we can produce a range of multigrain nanocrystals containing distinct GB defects.


  
First-Principles Study of Thermodynamics and Spin Transition in FeSiO3 Liquid at High Pressure 期刊论文
GEOPHYSICAL RESEARCH LETTERS, 2019, 46 (7) : 3706-3716
作者:  Sun, Yicheng;  Zhou, Huiqun;  Yin, Kun;  Lu, Xiancai
收藏  |  浏览/下载:15/0  |  提交时间:2019/11/26
FeSiO3 liquid  magma ocean  thermodynamics  spin transition  First-principles  high pressure  
Density-Pressure Profiles of Fe-Bearing MgSiO3 Liquid: Effects of Valence and Spin States, and Implications for the Chemical Evolution of the Lower Mantle 期刊论文
GEOPHYSICAL RESEARCH LETTERS, 2018, 45 (9) : 3959-3966
作者:  Karki, Bijaya B.;  Ghosh, Dipta B.;  Maharjan, Charitra;  Karato, Shun-ichiro;  Park, Jeffrey
收藏  |  浏览/下载:21/0  |  提交时间:2019/04/09
silicate melts  density  spin transition  first-principles simulation  high pressure