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Holocene earthquake history and slip rate of the southern Teton fault, Wyoming, USA 期刊论文
GEOLOGICAL SOCIETY OF AMERICA BULLETIN, 2020, 132 (7-8) : 1566-1586
作者:  DuRoss, Christopher B.;  Gold, Ryan D.;  Briggs, Richard W.;  Delano, Jaime E.;  Ostenaa, Dean A.;  Zellman, Mark S.;  Cholewinski, Nicole;  Wittke, Seth J.;  Mahan, Shannon A.
收藏  |  浏览/下载:7/0  |  提交时间:2020/08/18
Subduction, mantle metasomatism, and gold: A dynamic and genetic conjunction 期刊论文
GEOLOGICAL SOCIETY OF AMERICA BULLETIN, 2020, 132 (7-8) : 1419-1426
作者:  Groves, David, I;  Zhang, Liang;  Santosh, M.
收藏  |  浏览/下载:4/0  |  提交时间:2020/08/18
A genetic link between iron oxide-apatite and iron skarn mineralization in the Jinniu volcanic basin, Daye district, eastern China: Evidence from magnetite geochemistry and multi-mineral U-Pb geochronology 期刊论文
GEOLOGICAL SOCIETY OF AMERICA BULLETIN, 2020, 132 (5-6) : 899-917
作者:  Hu, Hao;  Li, Jian-Wei;  Harlov, Daniel E.;  Lentz, David R.;  Mcfarlane, Chris R. M.;  Yang, Yue-Heng
收藏  |  浏览/下载:7/0  |  提交时间:2020/07/02
Southern Responses to Fair Trade Gold: Cooperation, Complaint, Competition, Supplementation 期刊论文
ECOLOGICAL ECONOMICS, 2020, 169
作者:  Sippl, Kristin
收藏  |  浏览/下载:2/0  |  提交时间:2020/07/02
The Xiaoqinling metamorphic core complex: A record of Early Cretaceous backarc extension along the southern part of the North China Craton 期刊论文
GEOLOGICAL SOCIETY OF AMERICA BULLETIN, 2020, 132 (3-4) : 617-637
作者:  Li, Yunjian;  Zhu, Guang;  Su, Nan;  Xiao, Shiye;  Zhang, Shuai;  Liu, Cheng;  Xie, Chenglong;  Yin, Hao;  Wu, Xiaodong
收藏  |  浏览/下载:10/0  |  提交时间:2020/07/02
First Synoptic Observations of Geomagnetic Storm Effects on the Global-Scale OI 135.6-nm Dayglow in the Thermosphere by the GOLD Mission 期刊论文
GEOPHYSICAL RESEARCH LETTERS, 2020, 47 (3)
作者:  Gan, Quan;  Eastes, Richard W.;  Burns, Alan G.;  Wang, Wenbin;  Qian, Liying;  Solomon, Stanley C.;  Codrescu, Mihail, V;  McInerney, Joseph;  McClintock, William E.
收藏  |  浏览/下载:9/0  |  提交时间:2020/07/02
High-pressure strengthening in ultrafine-grained metals 期刊论文
NATURE, 2020
作者:  Yoshida, Kenichi;  Gowers, Kate H. C.;  Lee-Six, Henry;  Chandrasekharan, Deepak P.;  Coorens, Tim;  Maughan, Elizabeth F.;  Beal, Kathryn;  Menzies, Andrew;  Millar, Fraser R.;  Anderson, Elizabeth;  Clarke, Sarah E.;  Pennycuick, Adam;  Thakrar, Ricky M.;  Butler, Colin R.
收藏  |  浏览/下载:27/0  |  提交时间:2020/07/03

High-pressure diamond anvil cell experiments reveal that compression strengthening of nanocrystalline nickel increases as its grain sizes decrease to 3 nanometres, owing to dislocation hardening and suppression of grain boundary plasticity.


The Hall-Petch relationship, according to which the strength of a metal increases as the grain size decreases, has been reported to break down at a critical grain size of around 10 to 15 nanometres(1,2). As the grain size decreases beyond this point, the dominant mechanism of deformation switches from a dislocation-mediated process to grain boundary sliding, leading to material softening. In one previous approach, stabilization of grain boundaries through relaxation and molybdenum segregation was used to prevent this softening effect in nickel-molybdenum alloys with grain sizes below 10 nanometres(3). Here we track in situ the yield stress and deformation texturing of pure nickel samples of various average grain sizes using a diamond anvil cell coupled with radial X-ray diffraction. Our high-pressure experiments reveal continuous strengthening in samples with grain sizes from 200 nanometres down to 3 nanometres, with the strengthening enhanced (rather than reduced) at grain sizes smaller than 20 nanometres. We achieve a yield strength of approximately 4.2 gigapascals in our 3-nanometre-grain-size samples, ten times stronger than that of a commercial nickel material. A maximum flow stress of 10.2 gigapascals is obtained in nickel of grain size 3 nanometres for the pressure range studied here. We see similar patterns of compression strengthening in gold and palladium samples down to the smallest grain sizes. Simulations and transmission electron microscopy reveal that the high strength observed in nickel of grain size 3 nanometres is caused by the superposition of strengthening mechanisms: both partial and full dislocation hardening plus suppression of grain boundary plasticity. These insights contribute to the ongoing search for ultrastrong metals via materials engineering.


  
Thermospheric Composition O/N-2 Response to an Altered Meridional Mean Circulation During Sudden Stratospheric Warmings Observed by GOLD 期刊论文
GEOPHYSICAL RESEARCH LETTERS, 2020, 47 (1)
作者:  Oberheide, J.;  Pedatella, N. M.;  Gan, Q.;  Kumari, K.;  Burns, A. G.;  Eastes, R. W.
收藏  |  浏览/下载:6/0  |  提交时间:2020/07/02
Wafer-scale single-crystal hexagonal boron nitride monolayers on Cu (111) 期刊论文
NATURE, 2020, 579 (7798) : 219-+
作者:  Luong, Duy X.;  Bets, Ksenia V.;  Algozeeb, Wala Ali;  Stanford, Michael G.;  Kittrell, Carter;  Chen, Weiyin;  Salvatierra, Rodrigo V.;  Ren, Muqing;  McHugh, Emily A.;  Advincula, Paul A.;  Wang, Zhe;  Bhatt, Mahesh;  Guo, Hua;  Mancevski, Vladimir;  Shahsavari, Rouzbeh
收藏  |  浏览/下载:80/0  |  提交时间:2020/07/03

Ultrathin two-dimensional (2D) semiconducting layered materials offer great potential for extending Moore'  s law of the number of transistors in an integrated circuit(1). One key challenge with 2D semiconductors is to avoid the formation of charge scattering and trap sites from adjacent dielectrics. An insulating van der Waals layer of hexagonal boron nitride (hBN) provides an excellent interface dielectric, efficiently reducing charge scattering(2,3). Recent studies have shown the growth of single-crystal hBN films on molten gold surfaces(4) or bulk copper foils(5). However, the use of molten gold is not favoured by industry, owing to its high cost, cross-contamination and potential issues of process control and scalability. Copper foils might be suitable for roll-to-roll processes, but are unlikely to be compatible with advanced microelectronic fabrication on wafers. Thus, a reliable way of growing single-crystal hBN films directly on wafers would contribute to the broad adoption of 2D layered materials in industry. Previous attempts to grow hBN monolayers on Cu (111) metals have failed to achieve mono-orientation, resulting in unwanted grain boundaries when the layers merge into films(6,7). Growing single-crystal hBN on such high-symmetry surface planes as Cu (111)(5,8) is widely believed to be impossible, even in theory. Nonetheless, here we report the successful epitaxial growth of single-crystal hBN monolayers on a Cu (111) thin film across a two-inch c-plane sapphire wafer. This surprising result is corroborated by our first-principles calculations, suggesting that the epitaxial growth is enhanced by lateral docking of hBN to Cu (111) steps, ensuring the mono-orientation of hBN monolayers. The obtained single-crystal hBN, incorporated as an interface layer between molybdenum disulfide and hafnium dioxide in a bottom-gate configuration, enhanced the electrical performance of transistors. This reliable approach to producing wafer-scale single-crystal hBN paves the way to future 2D electronics.


  
Gold endowments of porphyry deposits controlled by precipitation efficiency 期刊论文
NATURE COMMUNICATIONS, 2020, 11 (1)
作者:  Chiaradia, Massimo
收藏  |  浏览/下载:1/0  |  提交时间:2020/05/13